Bipolar Junction Transistor (BJT)- Amplifiers
Transistor Biasing and Small-Signal Amplifiers
Biasing of a transistor is purely a DC operation.
Purpose of biasing: Establish a Q-point for current and voltage variations in response to an AC input signal.
In applications requiring amplification of small signal voltages (e.g., from an antenna or microphone), variations around the Q-point are kept relatively small.
Amplifiers for these small AC signals are called small-signal amplifiers.
Linear Amplifier Operation and Transistor Behavior
A linear amplifier amplifies a signal without distortion, providing an exact amplified replica of the input.
In a voltage-divider biased transistor:
Coupling capacitors \(C_1\) and \(C_2\) block DC, preventing changes in the bias voltages at the base and collector.
The capacitors appear as shorts to the signal voltage.
Sinusoidal AC source causes base voltage to vary around the DC bias \(V_{BQ}\).
The base current variation leads to a larger variation in collector current due to transistor current gain.
Collector voltage decreases as the collector current increases, and vice versa.
The collector-to-emitter voltage varies out of phase with the base voltage.
Phase inversion: There is always a phase shift between base and collector voltage.
Base Current and AC Load Line in a Linear Amplifier
The sinusoidal voltage at the base produces a base current that varies above and below the Q-point along the AC load line.
Peak-to-peak variations in collector current and collector-to-emitter voltage are shown by lines projected from the peaks of the base current.
The AC load line differs from the DC load line:
The effective AC collector resistance is \(R_L\) in parallel with \(R_C\), which is less than the DC collector resistance \(R_C\) alone.
The distinction between the DC and AC load lines is explored further in the context of power amplifiers.
Transistor Models in Amplifier Circuits
Purpose: Represent the operation of a transistor in an amplifier using a model circuit.
Transistor Model Circuit: Utilizes internal transistor parameters to describe operation.
Types of Parameters:
r Parameters: Based on resistance values, commonly used to model transistor behavior.
h Parameters: An alternative system of parameters, briefly discussed.
- The five r parameters commonly used for BJTs are:
r-Parameter Transistor Model
\(r_b^{\prime}\) is small enough to neglect \(\Rightarrow\) replaced by short
\(r_c^{\prime}\) usually several hundred \(\mathrm{k}\Omega\) \(\Rightarrow\) replaced by open
\(r_e^{\prime}\) is seen looking into the emitter of a F.B. transistor
Collector acts as a dependent current source of \(\alpha_{ac}I_e\) or \(\beta_{ac}I_b\)
\(r_e^{\prime}\) is the most important r-parameter
- \(I_B\)\(I_C\)\[\begin{aligned} \beta_{dc} & = \dfrac{I_C}{I_B}\\ \beta_{ac} & = \dfrac{\Delta I_C}{\Delta I_B}\\ \end{aligned}\]