GATE 2022 Analog Electronics Questions and Solutions

A circuit and the characteristics of the diode D in it are shown. The ratio of the minimum to the maximum small-signal voltage gain \(\frac{dV_{out}}{dV_{in}}\) is rounded off to two decimal places.

Solution 1

Small-signal model:
Two series 2 k\(\Omega\) resistors form the top divider. The diode is modeled by \(r_d\) between the middle and right nodes, and a 2 k\(\Omega\) load to ground at the right node.

Case I (diode ON, \(r_d = 0\) short):
The right 2 k\(\Omega\) branch is effectively isolated, giving a divider of \(2k/(2k+2k)=4k\).

Case II (diode OFF, \(r_d = \infty\)):
The three 2 k\(\Omega\) resistors are in series, for a total of 6 k\(\Omega\). \(V_{out}\) is across the last 4 k\(\Omega\):

Required ratio = \(\frac{0.67}{0.5} = 1.33\).

Consider the circuit shown with an ideal long-channel nMOSFET (enhancement mode, substrate tied to source). The transistor is biased in saturation with \(V_{GG}\) and \(V_{DD}\) so that it acts as a linear amplifier. \(v_i\) is the small-signal input. \(v_A\) and \(v_B\) are the small-signal node voltages at A and B, respectively. The value of \(v_A/v_B\) is rounded to one decimal place.

Solution 2

AC analysis:
With the device in saturation, the small-signal drain current is \(i_d\).
Node voltages: \(v_A = i_d \cdot 4k\), \(v_B = i_d \cdot 2k\).

Consider an ideal long-channel nMOSFET (enhancement mode) with gate length \(L = 10\,\mu m\) and width \(W = 100\,\mu m\). The product \(\mu_n C_{ox} = 1\,mA/V^2\). The threshold voltage is \(V_T = 1\,V\). For \(V_{GS} = 2\sin^2 t\,V\) and \(V_{DS}=1\,V\), substrate tied to source, the maximum value of the drain current is

A. 40 mA
B. 20 mA
C. 15 mA
D. 5 mA

Solution 3

At the peak, \(V_{GS,max} = 3\,V\).
Since \(V_{DS} = 1\,V < V_{GS,max} - V_T = 2\,V\), the device is in the triode (linear) region at the maximum current.

Correct option: C.

The ideal long-channel nMOSFET and pMOSFET devices in the circuits have threshold voltages of 1 V and -1 V, respectively. Substrates are tied to their sources. Ignore leakage, capacitors are initially discharged. For the applied supply voltages, the steady-state voltages are \(V_1\) and \(V_2\).

A. \(V_1=5\,V, V_2=5\,V\)
B. \(V_1=5\,V, V_2=4\,V\)
C. \(V_1=4\,V, V_2=5\,V\)
D. \(V_1=4\,V, V_2=5\,V\)

Solution 4

For the nMOS circuit (left), gate at 5V, source at \(V_1\); conduction stops when \(V_{GS}=V_T = 1\,V\).
Thus, at steady-state: \(5 - V_1 = 1\) so \(V_1 = 4\,V\).
For the pMOS circuit (right), gate at 5V, source at \(V_2\); conduction stops when \(V_{SG}=|V_T|=1\,V\).
Hence, at steady-state: \(V_2 = 5\,V\).
Correct option: C.

Consider the CMOS circuit shown (substrates tied to sources, gate \(W/L\) ratios as marked). Both devices have the same \(C_{ox}\) per unit area. For pMOS, \(V_T = -1\,V\), hole mobility \(= 40\). For nMOS, \(V_T = 1\,V\), electron mobility \(= 300\). The steady-state output voltage \(V_o\) is

A. equal to 0 V
B. more than 2 V
C. less than 2 V
D. equal to 2 V

Solution 5

At DC, equate the magnitudes of the pMOS and nMOS currents in saturation:

Given: \(\left(\frac{W}{L}\right)_p = 5\), \(\left(\frac{W}{L}\right)_n = 1\), \(\mu_p = 40\), \(\mu_n = 300\), \(V_{DD}=3\,V\), \(V_{Tp}=-1\,V\), \(V_{Tn}=1\,V\). Solve to get \(V_o < 2\,V\).
Correct option: C.

For the circuit shown (ideal op-amp), the difference between the maximum and minimum values of the capacitor voltage \(V_c\) is

A. 15 V
B. 27 V
C. 13 V
D. 14 V

Solution 6

[Image of Astable multivibrator waveforms]

When op-amp output is at 15 V: divider at input gives \(V_{R}= 15 \times \frac{R}{3R} = 5\,V\), so \(V_{c,max}=5\,V\).
When op-amp output is at -12 V: divider gives \(V_{R}= -12 \times \frac{2R}{3R} = -8\,V\), so \(V_{c,min}=-8\,V\).
Required difference \(= 5 - (-8) = 13\,V\).
Correct option: C.

The following circuit uses an op-amp with supply voltages \(\pm 15\,V\), input \(V_{in}\), and feedback components \(R_1 = 10k\), \(R_2 = 90k\), and \(C=0.1\mu F\). Find the steady-state output voltage \(V_{out}\) when \(V_{in}=2\sin(2000t)\) V.

A. \(9\sin(2000t)\)
B. \(18\sin(2000t)\)
C. \(9\cos(2000t)\)
D. \(18\cos(2000t)\)

Solution 7

This is a frequency-dependent feedback amplifier:

The inverting gain: \(A_v(j\omega) = \frac{Z_f}{R_1}\)
Plug values: \(R_1=10k, R_2=90k, C=0.1\mu F, \omega=2000\). Result: \(V_{out} = 9\cos(2000t)\). Correct option: C.

An ideal op-amp circuit with a sinusoidal input is shown. The 3 dB frequency is the frequency at which the magnitude of the voltage gain decreases by 3 dB from its maximum value. Which options are correct?

A. The circuit is a low pass filter.
B. The circuit is a high pass filter.
C. The 3 dB frequency is \(1000\,rad/s\).
D. The 3 dB frequency is \(1000\sqrt{3}\,rad/s\).

Solution 8

[Image of high pass filter Bode plot]

This is a high-pass filter with cutoff \(\omega_c = 1000\,rad/s\).
Correct options: B and C.