Solved Problems · Set 5

Gate Triggering, Series and Parallel Operation

Part 1 · Power Semiconductor Devices — a gate circuit has to land inside a region bounded on four sides, and a device string has to be persuaded to share what it will not share by itself. Six problems on both.

Prof. Mithun Mondal 6 solved problems GATE · ESE · University

Set 5 — Gate Triggering, Series and Parallel Operation

Firing a thyristor sounds like a one-line job: put some current into the gate. It is not, because the gate has four separate limits and the drive must satisfy all of them at once. Too little voltage or current and the device does not trigger; too much of either, even briefly, and the gate junction is destroyed. Problem 1 draws that region and puts a load line through it, which is the whole of gate-circuit design in one graph.

The second half of the set asks what happens when one device is not enough. Thyristors in series do not share voltage and thyristors in parallel do not share current, for the same underlying reason — manufacturing spread in characteristics that no amount of care removes. The remedy in both cases is to add a component whose behaviour swamps the mismatch, and then to count the cost, which is what string efficiency measures.

Part 1 · Chapters 3–4 · 6 solved problems

i Method Recap
  • The gate operating point must lie inside four boundaries: above \(V_{GT}\) and \(I_{GT}\) to fire the device at all, and below the peak and average power hyperbolas to survive:

    \[ V_g I_g \le P_{gm}, \qquad \delta\, V_g I_g \le P_{gav}, \qquad \delta = \text{pulse duty ratio} \]
  • The drive supplies a load line across that region:

    \[ E_s = V_g + I_g R_s \]

    Tangency to the power hyperbola gives the minimum permissible \(R_s\); the trigger requirement gives the maximum — Problem 1.

  • A UJT fires when its emitter reaches the peak-point voltage:

    \[ V_p = \eta V_{BB} + V_D, \qquad T = RC\ln\!\left(\frac{1}{1-\eta}\right) \]

    And \(R\) is bounded on both sides — Problem 2.

  • Series strings need static and dynamic sharing:

    \[ R \le \frac{nV_{Dm}-V_s}{(n-1)\Delta I_s}, \qquad C \ge \frac{(n-1)\Delta Q}{nV_{Dm}-V_s} \]

    The resistor handles steady leakage spread, the capacitor handles recovery-charge spread — Problem 3.

  • String efficiency measures what the mismatch cost:

    \[ \eta_{string} = \frac{V_s}{n V_{Dm}} \quad\text{or}\quad \frac{I_s}{m I_{Tm}}, \qquad \text{DRF} = 1-\eta_{string} \]
  • A pulse transformer is limited by volt-seconds, not volts:

    \[ V t \le N A_e \Delta B, \qquad \text{droop} = \frac{R t}{L_m} \]
Problem 1CoreThe Gate Load Line

A thyristor gate requires \(V_{GT} = 2.5\) V and \(I_{GT} = 100\) mA to fire, and is limited to an average gate power of 0.5 W. Its gate characteristic may be taken as \(V_g = 1.0 + 10\,I_g\). The trigger source is 15 V through a series resistance \(R_s\), delivering 100 µs pulses at 1 kHz. Find:

  1. the permitted peak gate power;
  2. the minimum \(R_s\) set by that peak power;
  3. the maximum \(R_s\) set by the trigger requirement;
  4. the operating point for \(R_s = 50\ \Omega\), and a check of all four constraints.
V GT I GT P gm limit gate characteristic Rs too small Rs too large valid region Ig Vg
The gate operating point must sit inside all four boundaries at once
Solution

Peak power from average power. The gate is driven in pulses, so the average limit is spread over the duty ratio:

\[ \delta = t_p f = \left(100\times10^{-6}\right)\left(1\times10^{3}\right) = 0.1 \]
\[ P_{gm} = \frac{P_{gav}}{\delta} = \frac{0.5}{0.1} = 5\ \text{W} \]

Pulsing is what makes a hard gate drive possible at all: 5 W peak from a device that can only average half a watt.

Minimum \(R_s\) — the load line must not cross the power hyperbola. Substituting the load line into \(V_gI_g = P_{gm}\):

\[ I_g\left(E_s - I_g R_s\right) = P_{gm} \;\Longrightarrow\; R_s I_g^2 - E_s I_g + P_{gm} = 0 \]

The line just touches the hyperbola when the discriminant vanishes:

\[ E_s^2 - 4R_sP_{gm} = 0 \;\Longrightarrow\; R_s = \frac{E_s^2}{4P_{gm}} = \frac{225}{20} = 11.25\ \Omega \]

At tangency \(I_g = E_s/2R_s = 0.667\) A and \(V_g = 7.5\) V — exactly 5 W. Any smaller resistance and the load line cuts through the forbidden region.

Maximum \(R_s\) — the drive must still reach the trigger point:

\[ R_s \le \frac{E_s - V_{GT}}{I_{GT}} = \frac{15-2.5}{0.1} = 125\ \Omega \]
\[ \boxed{11.25\ \Omega \le R_s \le 125\ \Omega} \]

A wide window, which is fortunate, because \(V_{GT}\) and \(I_{GT}\) are worst-case cold values and the real device fires well inside them.

The operating point at \(R_s = 50\ \Omega\). Solve the load line against the gate characteristic simultaneously:

\[ 15 = V_g + 50I_g = \left(1.0+10I_g\right)+50I_g = 1.0+60I_g \]
\[ I_g = \frac{14}{60} = 233\ \text{mA}, \qquad V_g = 1.0+10(0.2333) = 3.33\ \text{V} \]

Check all four constraints:

ConstraintLimitActualVerdict
Gate current to fire\(\ge\) 100 mA233 mApass, 2.3×
Gate voltage to fire\(\ge\) 2.5 V3.33 Vpass
Peak gate power\(\le\) 5 W0.78 Wpass, 6.4× margin
Average gate power\(\le\) 0.5 W0.078 Wpass

Comfortably inside on every count. Note that overdriving the gate — here by 2.3 times — is deliberate and desirable: a hard gate drive turns the device on faster, spreads the conducting plasma more quickly, and therefore improves the \(di/dt\) capability of Set 4.

The gate is the one terminal with limits on both sides. Anode ratings are ceilings only; the gate has floors as well, and the design problem is finding a load line that clears the floors without touching the ceiling. Draw the region first and the resistor value follows in two lines — try to reason about it algebraically and you will forget one of the four.
Answera\(P_{gm} = 5\ \text{W}\)   b\(R_s \ge 11.25\ \Omega\)   c\(R_s \le 125\ \Omega\)   d\(I_g = 233\ \text{mA},\ V_g = 3.33\ \text{V}\), all four satisfied
Problem 2CoreA UJT Firing Circuit

A UJT relaxation oscillator is to fire a thyristor at 1 kHz. The UJT has an intrinsic standoff ratio \(\eta = 0.63\), emitter diode drop \(V_D = 0.7\) V, interbase resistance \(R_{BB} = 5\ \text{k}\Omega\), peak-point current \(I_p = 10\ \mu\text{A}\), valley point \(V_v = 1.5\) V at \(I_v = 10\) mA. Supply \(V_{BB} = 20\) V and \(C = 0.5\ \mu\text{F}\). Find the peak-point voltage, the timing resistor, the permissible range of that resistor, and the base resistors.

Solution

The firing threshold. The UJT conducts when its emitter exceeds the fraction \(\eta\) of the interbase voltage, plus the diode drop:

\[ V_p = \eta V_{BB}+V_D = (0.63)(20)+0.7 = 13.3\ \text{V} \]

Charging time to that threshold. The capacitor charges exponentially towards \(V_{BB}\):

\[ V_p = V_{BB}\left(1-e^{-T/RC}\right) \;\Longrightarrow\; T = RC\ln\!\left(\frac{1}{1-\eta}\right) \]

Notice that \(V_{BB}\) cancels: the period depends on \(\eta\) but not on the supply voltage, which is exactly the property that makes the UJT a usable timing element.

Solve for \(R\) with \(T = 1\) ms:

\[ \ln\!\left(\frac{1}{1-0.63}\right) = \ln(2.703) = 0.994 \]
\[ R = \frac{T}{C\ln\left[1/(1-\eta)\right]} = \frac{1\times10^{-3}}{\left(0.5\times10^{-6}\right)(0.994)} = 2.01\ \text{k}\Omega \]

Convenient coincidence worth remembering: for \(\eta \approx 0.63\) the logarithm is almost exactly 1, so \(T \approx RC\).

The resistor is bounded on both sides, and this is the part that gets missed. Too large and the capacitor never reaches the peak point:

\[ R_{max} = \frac{V_{BB}-V_p}{I_p} = \frac{20-13.3}{10\times10^{-6}} = 670\ \text{k}\Omega \]

Too small and, after firing, \(R\) keeps supplying more than the valley current, so the UJT never turns off and the oscillator latches:

\[ R_{min} = \frac{V_{BB}-V_v}{I_v} = \frac{20-1.5}{10\times10^{-3}} = 1.85\ \text{k}\Omega \]

Check the design against those bounds:

\[ 1.85\ \text{k}\Omega \;<\; 2.01\ \text{k}\Omega \;<\; 670\ \text{k}\Omega \quad\checkmark \]

It passes, but only by 9% at the lower end. Component tolerance or a warm UJT could push it below \(R_{min}\), at which point the circuit stops oscillating altogether. The fix is to raise \(R\) and lower \(C\) proportionally — say 20 kΩ and 0.05 µF for the same 1 ms, giving an order of magnitude of margin.

The base resistors follow the standard design relations, with \(R_2\) providing temperature compensation and \(R_1\) developing the output pulse:

\[ R_2 = \frac{10^4}{\eta V_{BB}} = \frac{10^4}{(0.63)(20)} = 794\ \Omega \]
\[ R_1 = \frac{0.7\,R_{BB}}{\eta V_{BB}} = \frac{(0.7)(5000)}{12.6} = 278\ \Omega \]

The pulse appears across \(R_1\) as the capacitor dumps into base 1, giving a short, sharp trigger of the kind Problem 1 assumed.

A timing resistor with an upper and a lower bound is a general pattern. Anything that charges a capacitor toward a threshold has a maximum resistance set by the current needed to reach the threshold, and anything that must reset has a minimum set by the current that would sustain conduction. The same two-sided constraint reappears for the bootstrap supply in Set 7.
Answera\(V_p = 13.3\ \text{V}\)   b\(R = 2.01\ \text{k}\Omega\)   c\(1.85\ \text{k}\Omega\text{–}670\ \text{k}\Omega\)   d\(R_1 = 278\ \Omega,\ R_2 = 794\ \Omega\)
Problem 3Exam levelSharing Voltage in Series

A 15 kV string is built from thyristors each rated \(V_{Dm} = 2\) kV. Their steady blocking currents lie between 20 and 30 mA, and their recovery-charge spread is \(\Delta Q = 30\ \mu\text{C}\). Find the number of devices, the string efficiency and derating factor, the static equalizing resistor and its dissipation, and the dynamic sharing capacitor.

Solution

Number of devices. Ideal sharing would need \(15000/2000 = 7.5\), so eight, and the fractional device is exactly the margin that unequal sharing consumes:

\[ n = 8, \qquad \eta_{string} = \frac{V_s}{nV_{Dm}} = \frac{15000}{(8)(2000)} = 0.9375 = 93.75\% \]
\[ \text{DRF} = 1-\eta_{string} = 6.25\% \]

Why they do not share. In series every device carries the same current. A device with lower leakage needs more reverse voltage to pass that current, so it takes the larger share — and being closest to breakdown, it is the one that fails first. Worst case, one device sits at its full \(V_{Dm}\) while the other seven divide the remainder.

Static equalizing resistors. Putting \(R\) across each device gives the leakage mismatch somewhere to go. In the worst case the standard result is:

\[ R \le \frac{nV_{Dm}-V_s}{(n-1)\Delta I_s} = \frac{(8)(2000)-15000}{(7)\left(10\times10^{-3}\right)} = \frac{1000}{0.07} = 14.3\ \text{k}\Omega \]

The numerator is the total spare blocking voltage the string has — 1 kV — and the denominator is the mismatch current it must absorb. More devices, or better matched ones, allow a larger and therefore cooler resistor.

What the resistors cost:

\[ P_R = \frac{\left(V_s/n\right)^2}{R} = \frac{(1875)^2}{14.3\times10^{3}} = 246\ \text{W per device} \]
\[ P_{total} = 8(246) = 1.97\ \text{kW} \]

A startling figure until it is put in context: a 15 kV string carrying, say, 500 A handles 7.5 MW, so the sharing network costs 0.03% of throughput. In HVDC valve design these resistors are real, large and water-cooled, and they are simply part of the price of stacking devices.

Dynamic sharing. The resistors handle steady leakage, but during turn-off the devices recover at different rates, and the one that recovers first is suddenly asked to block everything. A capacitor across each device holds the voltage down while that happens:

\[ C \ge \frac{(n-1)\Delta Q}{nV_{Dm}-V_s} = \frac{(7)\left(30\times10^{-6}\right)}{1000} = 0.21\ \mu\text{F} \quad\to\quad 0.22\ \mu\text{F} \]

Same spare-voltage denominator, with recovery charge in place of leakage current — because the transient mismatch is a charge, not a current.

The two networks together. In practice the capacitor is fitted in series with a small resistor, so that it also damps the turn-on discharge:

NetworkHandlesValueActive during
Static resistorLeakage spread \(\Delta I_s\)14.3 kΩsteady blocking
Dynamic capacitorRecovery spread \(\Delta Q\)0.22 µFturn-off transient

Neither substitutes for the other. A capacitor passes no steady current so it cannot correct leakage; a resistor of 14 kΩ is far too slow to act during a recovery lasting microseconds.

String efficiency is the honest name for the extra devices you had to buy. At 93.75% the string carries eight devices to do the work of 7.5, and the missing half a device is the price of manufacturing spread. Better matched thyristors raise the efficiency, allow larger sharing resistors, and reduce the auxiliary loss — which is why series strings are always built from a single graded batch.
Answera\(n = 8\)   b\(93.75\%,\ \text{DRF} = 6.25\%\)   c\(R = 14.3\ \text{k}\Omega,\ 246\ \text{W each}\)   d\(C = 0.22\ \mu\text{F}\)
Problem 4Exam levelSharing Current in Parallel

Three thyristors, each rated 110 A, are paralleled to carry 300 A. Their on-state characteristics are:

  • \(T_1:\ v = 1.0+0.005\,i\)
  • \(T_2:\ v = 1.1+0.005\,i\)
  • \(T_3:\ v = 1.2+0.005\,i\)

Find the current split, the maximum current the group can actually carry, the string efficiency, and the improvement obtained by adding \(10\ \text{m}\Omega\) in series with each device.

Solution

Parallel means equal voltage. Setting the three characteristics equal pairwise turns the offset differences into current differences:

\[ I_1-I_2 = \frac{1.1-1.0}{0.005} = 20\ \text{A}, \qquad I_1-I_3 = \frac{1.2-1.0}{0.005} = 40\ \text{A} \]

Add the constraint that they carry 300 A between them:

\[ I_1+\left(I_1-20\right)+\left(I_1-40\right) = 300 \;\Longrightarrow\; 3I_1 = 360 \]
\[ I_1 = 120\ \text{A},\qquad I_2 = 100\ \text{A},\qquad I_3 = 80\ \text{A} \]

A 200 mV spread in forward voltage produces a 40 A spread in current, and \(T_1\) is 10 A over its 110 A rating while \(T_3\) loafs at 80.

What the group can really carry. The limit is reached when the hardest-worked device hits its rating, i.e. \(I_1 = 110\) A:

\[ I_{total} = 3I_1-60 = 3(110)-60 = 270\ \text{A} \]
\[ \eta_{string} = \frac{270}{(3)(110)} = 0.818 = 81.8\%, \qquad \text{DRF} = 18.2\% \]

Nearly a fifth of the installed silicon is unusable. And the situation is worse than static: \(T_1\) runs hottest, a thyristor's forward drop falls with temperature, so it takes an even larger share — a positive feedback that has no equivalent in paralleled MOSFETs, whose \(R_{DS(on)}\) rises with temperature and therefore self-balances.

Force the sharing. Adding \(R_s = 10\ \text{m}\Omega\) to each branch simply steepens every characteristic, so the same voltage offset produces less current imbalance:

\[ I_1-I_2 = \frac{0.1}{0.005+0.010} = 6.67\ \text{A}, \qquad I_1-I_3 = 13.33\ \text{A} \]
\[ 3I_1 - 20 = 300 \;\Longrightarrow\; I_1 = 106.7,\quad I_2 = 100,\quad I_3 = 93.3\ \text{A} \]

Now the full 300 A fits:

QuantityNo sharingWith 10 mΩ
Currents (A)120 / 100 / 80106.7 / 100 / 93.3
Worst device vs 110 Aover by 10 Aunder by 3.3 A
Spread ratio1.50 : 11.14 : 1
Usable total270 A300 A
String efficiency81.8%90.9%
\[ P_{R} = R_s\sum I^2 = (0.010)\left(106.7^2+100^2+93.3^2\right) = (0.010)(30{,}089) = 301\ \text{W} \]

301 W buys back 30 A of capacity. Whether that is a good trade depends on what a fourth thyristor costs — and in practice the sharing element is usually a small inductor or a few centimetres of deliberately routed busbar rather than a resistor, which achieves the same slope during transients without the steady dissipation.

Series and parallel are the same problem with the roles exchanged. In series the shared quantity is current and the mismatch appears as voltage; in parallel the shared quantity is voltage and the mismatch appears as current. Both are fixed by adding an element whose own characteristic dominates the spread, and both are measured by string efficiency — which is simply the fraction of the silicon you paid for that you are allowed to use.
Answera\(120/100/80\ \text{A}\)   b\(270\ \text{A}\)   c\(81.8\%\)   d\(106.7/100/93.3\ \text{A},\ 90.9\%,\ 301\ \text{W}\)
Problem 5ChallengeThe Pulse Transformer

A 1:1 pulse transformer isolates a gate drive. The core has \(A_e = 20\ \text{mm}^2\) and a usable flux swing \(\Delta B = 0.3\) T; the winding inductance factor is \(A_L = 1\ \mu\text{H/turn}^2\). The primary is driven at 15 V for 20 µs, and the gate needs 200 mA at 3 V. Find:

  1. the volt-second capability with 50 turns, and whether it suffices;
  2. a turns count that gives adequate margin;
  3. the magnetizing current and the pulse droop;
  4. the energy per pulse and the average drive power at 100 Hz.
Solution

A pulse transformer saturates on volt-seconds, not volts. From Faraday's law integrated over the pulse:

\[ V t = N A_e \Delta B \]
\[ \left(Vt\right)_{cap} = (50)\left(20\times10^{-6}\right)(0.3) = 300\ \text{V}\cdot\mu\text{s} \]

Compare with what is applied:

\[ \left(Vt\right)_{applied} = (15)(20) = 300\ \text{V}\cdot\mu\text{s} \]

Exactly at the limit — which means saturating. Once the core saturates its inductance collapses, the magnetizing current runs away, and the primary looks like a short circuit to the driver. The gate pulse simply disappears part-way through, and the thyristor may or may not have latched by then.

Add margin by adding turns. The ratio stays 1:1 — only the absolute turns count matters for saturation:

\[ N = 100:\qquad \left(Vt\right)_{cap} = 600\ \text{V}\cdot\mu\text{s} \;\Longrightarrow\; \text{50\% utilisation} \]

A factor of two is the usual target, because the core must also cope with a hot ambient (lower \(B_{sat}\)) and with incomplete reset between pulses.

Magnetizing current at the end of the pulse, from the magnetizing inductance:

\[ L_m = A_L N^2 = \left(1\times10^{-6}\right)(100)^2 = 10\ \text{mH} \]
\[ I_m = \frac{Vt}{L_m} = \frac{(15)\left(20\times10^{-6}\right)}{10\times10^{-3}} = 30\ \text{mA} \]

Against a 200 mA gate current — 15%, which the driver must supply on top of the useful load and which contributes nothing to firing the thyristor.

Droop. Because the magnetizing current grows through the pulse, the output amplitude sags. With the effective loop resistance \(R = 15/0.2 = 75\ \Omega\):

\[ \text{droop} = \frac{Rt}{L_m} = \frac{(75)\left(20\times10^{-6}\right)}{10\times10^{-3}} = 0.15 = 15\% \]

So a pulse that starts at 3 V ends at about 2.55 V. That still clears the 2.5 V \(V_{GT}\) of Problem 1, but barely — and it is the trailing edge that matters, because that is when the load current is closest to the latching threshold. Under 20% droop is the usual rule.

Energy accounting:

\[ W_{gate} = V_g I_g t = (3)(0.2)\left(20\times10^{-6}\right) = 12\ \mu\text{J} \]
\[ W_{mag} = \tfrac12 L_m I_m^2 = \tfrac12\left(10\times10^{-3}\right)(0.03)^2 = 4.5\ \mu\text{J} \]
\[ P_{avg} = \left(W_{gate}+W_{mag}\right)f = \left(16.5\times10^{-6}\right)(100) = 1.65\ \text{mW} \]

Negligible in power terms — the pulse transformer exists for isolation, not efficiency. The magnetizing energy is not lost as such, but it must be reset out of the core between pulses through a reset winding or a clamp, or the flux walks up cycle by cycle until it saturates anyway.

Three separate limits, one component. Volt-seconds decide whether the pulse survives at all; magnetizing inductance decides how much it droops; and reset decides whether the next pulse starts from the same flux as this one. A pulse transformer specified only by its turns ratio and isolation voltage has had none of the three checked.
Answera\(300\ \text{V}\!\cdot\!\mu\text{s}\), exactly at saturation   b\(N = 100\)   c\(I_m = 30\ \text{mA}\), droop 15%   d\(16.5\ \mu\text{J},\ 1.65\ \text{mW}\)
Problem 6ChallengeA Full Device Matrix

A converter arm must block 6 kV and carry 600 A, built from thyristors rated 2 kV and 200 A with an on-state model \(v = 1.2+0.005\,i\) and a blocking-current spread of 10 mA. Find:

  1. the matrix size, allowing one device of margin in each direction;
  2. the series, parallel and overall string efficiencies;
  3. the conduction loss and arm efficiency;
  4. the static sharing resistors and their total dissipation.
Solution

Size the matrix. Ideal sharing would need exactly three in each direction, which leaves no margin at all for the mismatch that Problems 3 and 4 quantified:

\[ \frac{6000}{2000} = 3 \;\to\; n = 4, \qquad \frac{600}{200} = 3 \;\to\; m = 4 \]
\[ \text{total devices} = nm = 16 \]

A bare 3×3 would give 100% string efficiency, which sounds ideal and is in fact a statement that every device operates at exactly its rating with zero tolerance for spread — unbuildable.

The three efficiencies:

\[ \eta_{series} = \frac{6000}{(4)(2000)} = 75\%, \qquad \eta_{parallel} = \frac{600}{(4)(200)} = 75\% \]
\[ \eta_{overall} = \frac{V_sI_s}{nm\,V_{Dm}I_{Tm}} = \frac{(6000)(600)}{(16)(2000)(200)} = 56.25\% \]

And note the structure: \(0.75\times0.75 = 0.5625\). The two derating factors multiply, so a matrix wastes silicon far faster than either dimension alone. Sixteen devices are installed to do the work of nine.

Conduction loss. Each device carries a quarter of the arm current:

\[ i = \frac{600}{4} = 150\ \text{A}, \qquad v = 1.2+(0.005)(150) = 1.95\ \text{V} \]

The arm's total forward drop is four devices in series, and the whole 600 A passes through it:

\[ V_{arm} = 4(1.95) = 7.8\ \text{V}, \qquad P_{cond} = (7.8)(600) = 4.68\ \text{kW} \]

Arm efficiency:

\[ P_o = (6000)(600) = 3.6\ \text{MW}, \qquad \eta = \frac{3.6\times10^{6}}{3.6\times10^{6}+4680} = 99.87\% \]

4.68 kW is a great deal of heat in absolute terms — it needs serious cooling — and simultaneously a rounding error against the throughput. Both statements matter, and confusing which one is relevant to a given question is a common trap.

Static sharing for the series dimension:

\[ R \le \frac{nV_{Dm}-V_s}{(n-1)\Delta I_s} = \frac{(4)(2000)-6000}{(3)\left(10\times10^{-3}\right)} = \frac{2000}{0.03} = 66.7\ \text{k}\Omega \]
\[ P_R = \frac{(1500)^2}{66.7\times10^{3}} = 33.8\ \text{W each}, \qquad P_{total} = 16(33.8) = 540\ \text{W} \]

Compare with the 14.3 kΩ and 246 W of Problem 3. The extra device of margin here left 2 kV of spare blocking voltage instead of 1 kV, which permitted a resistor four times larger and cut the dissipation by a factor of seven. Margin is not only insurance — it pays for itself in auxiliary loss.

The complete picture:

ItemValueShare of 3.6 MW
Device conduction4680 W0.130%
Sharing resistors540 W0.015%
Total5220 W0.145%

The sharing network adds 12% to the arm's losses — a real cost, and the reason matched device batches are worth paying for, but not one that threatens the 99.85% efficiency that makes line-commutated converters attractive at these power levels in the first place.

Derating factors multiply, so margin is cheapest where you need least of it. Going from 3×3 to 4×4 added seven devices, but it also doubled the spare blocking voltage, quadrupled the permissible sharing resistance and cut the auxiliary loss sevenfold. The naive view — that margin is pure overhead — misses that the sharing network's cost falls faster than the device count rises.
Answera\(4\times4 = 16\)   b\(75\%,\ 75\%,\ 56.25\%\)   c\(4.68\ \text{kW},\ \eta = 99.87\%\)   d\(66.7\ \text{k}\Omega,\ 540\ \text{W}\)
Formulas

Key Formulas

QuantityRelationNotes
Gate duty ratio\(\delta = t_p f\)Converts peak to average
Peak gate power\(P_{gm} = P_{gav}/\delta\)Why pulsing works — Problem 1
Gate load line\(E_s = V_g+I_gR_s\)Solve with gate characteristic
Minimum \(R_s\)\(R_s \ge \dfrac{E_s^2}{4P_{gm}}\)Tangent to the hyperbola — Problem 1
Maximum \(R_s\)\(R_s \le \dfrac{E_s-V_{GT}}{I_{GT}}\)Must still trigger
UJT peak point\(V_p = \eta V_{BB}+V_D\)Problem 2
UJT period\(T = RC\ln\!\left[1/(1-\eta)\right]\)\(\approx RC\) for \(\eta = 0.63\)
UJT \(R\) bounds\(\dfrac{V_{BB}-V_v}{I_v} < R < \dfrac{V_{BB}-V_p}{I_p}\)Both must hold — Problem 2
Static sharing resistor\(R \le \dfrac{nV_{Dm}-V_s}{(n-1)\Delta I_s}\)Problems 3, 6
Dynamic sharing capacitor\(C \ge \dfrac{(n-1)\Delta Q}{nV_{Dm}-V_s}\)Recovery spread — Problem 3
String efficiency\(\eta = \dfrac{V_s}{nV_{Dm}}\) or \(\dfrac{I_s}{mI_{Tm}}\)\(\text{DRF} = 1-\eta\)
Matrix efficiency\(\eta_{overall} = \eta_{series}\,\eta_{parallel}\)They multiply — Problem 6
Parallel current split\(I_1-I_2 = \dfrac{\Delta V_0}{r_T+R_s}\)Added slope helps — Problem 4
Pulse transformer limit\(Vt \le NA_e\Delta B\)Volt-seconds — Problem 5
Pulse droop\(\text{droop} = Rt/L_m\)Keep under 20% — Problem 5
Pitfalls

Common Mistakes

  1. Checking only the trigger requirement. The gate has four limits, and the two power hyperbolas set the minimum series resistance — a constraint with the opposite sense to the one students expect — Problem 1.

  2. Applying the average gate power limit to the pulse. With \(\delta = 0.1\) the peak allowance is ten times the average, and ignoring that throws away the whole advantage of pulse triggering — Problem 1.

  3. Giving the UJT timing resistor only an upper bound. Too small a resistor sustains the valley current and the oscillator latches instead of oscillating — Problem 2.

  4. Assuming series devices share voltage equally. They share in inverse proportion to leakage, and the least leaky device is the endangered one — Problem 3.

  5. Fitting sharing resistors but no sharing capacitors. A resistor cannot act during a microsecond-scale recovery transient; the two networks address different mismatches — Problem 3.

  6. Sizing a parallel group by dividing the total current by the device count. Three 110 A devices carried 270 A, not 330 A — Problem 4.

  7. Forgetting that paralleled thyristors are thermally unstable. Forward drop falls with temperature, so the hottest device takes more current and gets hotter still — the opposite of paralleled MOSFETs — Problem 4.

  8. Rating a pulse transformer in volts. It saturates on volt-seconds; halving the pulse width doubles the permissible voltage — Problem 5.

  9. Ignoring droop on the trailing edge. That is precisely when the load current is nearest the latching threshold, so a sagging pulse fails in the way hardest to diagnose — Problem 5.

  10. Adding derating factors instead of multiplying string efficiencies. A 4×4 matrix at 75% each way is 56.25% overall, not 50% — Problem 6.

Looking Ahead

Six problems on getting a thyristor to start, and on getting several of them to cooperate. The gate turned out to be the only terminal with limits on both sides; the strings turned out to need a component whose characteristic swamps a manufacturing spread that no amount of care removes; and string efficiency turned out to be the honest name for the silicon you buy and cannot use.

Which leaves the question this whole part has deferred. Every problem so far has assumed the thyristor stops conducting at some point — at a supply zero crossing, or because a fault was cleared. In a DC circuit there is no zero crossing, and the gate cannot help. The current must be forced to zero by an external circuit that stores energy in advance and releases it at the right instant, and it must hold the device reverse-biased for longer than its turn-off time while doing so.

Next: Set 6 — Forced Commutation Circuit Design, where commutating capacitors and inductors are sized from the circuit turn-off time, the resonant, complementary and impulse classes are worked through, and the commutation loss is computed — which turns out to explain why none of these circuits are built any more.