Solved Problems · Set 8

Thermal Design and Heat-Sink Selection

Part 1 · Power Semiconductor Devices — every watt computed in Sets 2 to 7 has to leave the die. Six problems on the path it takes, and on the junction temperature that decides whether the device survives.

Prof. Mithun Mondal 6 solved problems GATE · ESE · University

Set 8 — Thermal Design and Heat-Sink Selection

Every set in this part has ended in watts. This one asks where they go. A semiconductor die is a few square millimetres of silicon that must stay below about 150 °C while dissipating tens or hundreds of watts, and between it and the room lie a die attach, a package, a thermal interface, a heatsink and a volume of moving air. Each is a thermal resistance, and they add in series exactly like electrical ones.

Two ideas carry the set. The first is that the thermal chain is a potential divider driven by a current source — the loss is fixed, so every degree of thermal resistance shows up directly as junction temperature. The second is that short pulses are cheap: silicon has heat capacity as well as resistance, so a device can survive a power level for ten milliseconds that would destroy it in a second. Problem 3 puts a number on that, and Problem 6 designs the cooling for a complete inverter.

Part 1 · Chapter 5 · 6 solved problems

i Method Recap
  • The thermal chain is a series circuit with loss as the current, temperature as the voltage and thermal resistance as the resistance:

    \[ T_j = T_a + P\left(R_{th(j-c)}+R_{th(c-s)}+R_{th(s-a)}\right) \]
  • Design backwards from the junction limit, derated by 20 to 25 °C:

    \[ R_{th(s-a)} \le \frac{T_{j,max}-T_a}{P} - R_{th(j-c)}-R_{th(c-s)} \]
  • Devices sharing a sink share only the last link. The sink carries the total loss; each device carries its own through its own package:

    \[ T_s = T_a + \left(\sum P_k\right)R_{th(s-a)}, \qquad T_{j,k} = T_s + P_k\left(R_{jc,k}+R_{cs,k}\right) \]
  • Under pulsed loading, use transient thermal impedance for the pulse and steady resistance for the average:

    \[ T_{j,peak} = T_a + P_{avg}R_{th} + \left(P_{pulse}-P_{avg}\right)Z_{th}\!\left(t_p\right) \]

    Because \(Z_{th} \ll R_{th}\) for short pulses — Problem 3.

  • Electrical isolation costs thermal resistance, and there are two ways to buy it — an insulating washer or an isolated package. They are not equivalent — Problem 5.

  • Check every device against the binding constraint, not just the hottest-running one: a low-loss device with a poor \(R_{th(j-c)}\) can still be the limit — Problem 6.

Problem 1CoreSizing the Chain

An IGBT dissipates 80 W. Its junction is rated 150 °C but is to be derated to 125 °C. \(R_{th(j-c)} = 0.20\) and \(R_{th(c-s)} = 0.05\ \text{K/W}\), and the ambient is 45 °C. Find the maximum permissible heatsink thermal resistance, the case and sink temperatures, and verify the chain.

junction 125 °C 0.20 case 109 °C 0.05 sink 105 °C 0.75 45 °C ambient P = 80 W flows through every link in series 16 °C drop 4 °C 60 °C drop
The heatsink carries three-quarters of the temperature drop — and it is the only link the designer chooses
Solution

Work backwards from the junction. The total temperature rise available is fixed by the derated limit and the ambient, and the loss is fixed by Sets 2 and 7:

\[ R_{th(j-a)} \le \frac{T_{j,max}-T_a}{P} = \frac{125-45}{80} = 1.0\ \text{K/W} \]

One kelvin per watt for the whole path — that single number is the thermal budget, and everything else is spending it.

Subtract the links you do not control:

\[ R_{th(s-a)} \le 1.0 - 0.20 - 0.05 = 0.75\ \text{K/W} \]

The device and the interface have already consumed a quarter of the budget before any heatsink is chosen. Note the implication: if the loss were 160 W instead of 80, the budget would be 0.5 K/W, the fixed links would still take 0.25, and the heatsink would have to be four times better — not twice.

The intermediate temperatures follow from the same current flowing through each link:

\[ T_c = T_j - PR_{th(j-c)} = 125-(80)(0.20) = 109^\circ\text{C} \]
\[ T_s = T_c - PR_{th(c-s)} = 109-(80)(0.05) = 105^\circ\text{C} \]

Verify from the other end:

\[ T_s = T_a + PR_{th(s-a)} = 45+(80)(0.75) = 105^\circ\text{C}\ \checkmark \]

The two routes agree, which they must if the chain is series. This check catches the most common thermal error — adding a resistance in the wrong place, or forgetting that the full loss passes through every link.

Read the temperature distribution. Of the 80 °C total rise:

Link\(R_{th}\)RiseShare
Junction to case0.20 K/W16 °C20%
Case to sink0.05 K/W4 °C5%
Sink to ambient0.75 K/W60 °C75%

Three-quarters of the problem is the heatsink, which is both the only link the designer selects and by far the largest and most expensive. That ratio is typical, and it is why improving a thermal design almost always means more surface area or more airflow rather than a better device.

Derating 150 to 125 °C is not caution, it is arithmetic. Those 25 degrees are 0.31 K/W of the budget — nearly half of what the heatsink was allowed. Designing to the absolute maximum leaves nothing for a blocked filter, a hot day, or the loss increase that Set 2, Problem 5 showed comes with temperature itself.
Answera\(R_{th(s-a)} \le 0.75\ \text{K/W}\)   b\(T_c = 109^\circ\text{C}\)   c\(T_s = 105^\circ\text{C}\)   d verified from both ends
Problem 2CoreTwo Devices, One Sink

Two devices dissipating 60 W and 40 W are mounted on a common heatsink of \(R_{th(s-a)} = 0.5\ \text{K/W}\). Each has \(R_{th(j-c)} = 0.5\) and \(R_{th(c-s)} = 0.1\ \text{K/W}\), and the ambient is 40 °C. Find the sink temperature, both junction temperatures, and the heatsink required if \(T_{j,max} = 125^\circ\text{C}\).

Solution

The sink sees the sum; the packages see their own. This is the only structural point in the problem, and it is where mistakes happen:

\[ T_s = T_a + \left(P_1+P_2\right)R_{th(s-a)} = 40+(100)(0.5) = 90^\circ\text{C} \]

Both devices start from the same 90 °C platform, however unequal their losses.

Each junction then rises above that platform by its own loss through its own package:

\[ T_{j1} = T_s + P_1\left(R_{jc}+R_{cs}\right) = 90+(60)(0.6) = 90+36 = 126^\circ\text{C} \]
\[ T_{j2} = 90+(40)(0.6) = 90+24 = 114^\circ\text{C} \]

The verdict. Device 1 exceeds 125 °C by one degree; device 2 has 11 °C of margin. A design checked only on its average device — \(90+50(0.6) = 120^\circ\text{C}\) — would have passed, and would have been wrong.

The general rule: on a shared sink, always check the highest-dissipating device, and if the packages differ, check every one, because a low-loss device in a poor package can still be the binding constraint — as happens in Problem 6.

Size the sink properly. Impose the limit on the worst device:

\[ T_a + \left(P_1+P_2\right)R_{th(s-a)} + P_1\left(R_{jc}+R_{cs}\right) \le 125 \]
\[ R_{th(s-a)} \le \frac{125-40-36}{100} = \frac{49}{100} = 0.49\ \text{K/W} \]

A 2% improvement on the existing sink — which sounds trivial and is not, since heatsink performance improves slowly with size. In practice one would either use a marginally larger extrusion or accept 126 °C against a 150 °C absolute limit.

The alternative worth considering: separate the devices.

ArrangementDevice 1Device 2
Shared sink, 0.5 K/W126 °C114 °C
Two sinks, 1.0 K/W each136 °C112 °C

Splitting a sink into two of twice the resistance makes the hot device worse, because it loses the thermal help of its cooler neighbour. Sharing a sink is a form of averaging, and averaging always favours the device above the mean — which is precisely the one at risk.

A shared heatsink couples devices in one direction only. Each raises the common platform for all the others, but none can lower it. That makes shared cooling advantageous when losses are unequal and dangerous when a fault makes one device dissipate far more than its neighbours — a shorted phase leg heats the whole module before any thermal sensor on another device reacts.
Answera\(T_s = 90^\circ\text{C}\)   b\(126^\circ\text{C}\) and \(114^\circ\text{C}\)   c device 1 fails by 1 °C   d\(R_{th(s-a)} \le 0.49\ \text{K/W}\)
Problem 3Exam levelSurviving a Pulse

The device of Problem 1 — total \(R_{th(j-a)} = 1.0\ \text{K/W}\), \(T_a = 45^\circ\text{C}\) — is instead loaded with 500 W pulses of 10 ms duration repeating every 100 ms. Its transient thermal impedance for a 10 ms single pulse is \(Z_{th} = 0.05\ \text{K/W}\). Find the average power, the peak junction temperature, and compare with continuous operation at 500 W.

Solution

Average power first, because the steady part of the temperature rise depends on it alone:

\[ \delta = \frac{10\ \text{ms}}{100\ \text{ms}} = 0.1, \qquad P_{avg} = \delta P_{pulse} = (0.1)(500) = 50\ \text{W} \]

Split the problem in two. The junction temperature is the steady rise produced by the average power, plus the transient excursion produced by the excess above that average during each pulse:

\[ T_{j,peak} = T_a + P_{avg}R_{th(j-a)} + \left(P_{pulse}-P_{avg}\right)Z_{th}\!\left(t_p\right) \]

The average term uses the full steady-state resistance because, over many cycles, the whole thermal mass has come to equilibrium. The pulse term uses the much smaller transient impedance because 10 ms is far too short for the heat to reach the sink.

Evaluate:

\[ T_{j,avg} = 45+(50)(1.0) = 95^\circ\text{C} \]
\[ T_{j,peak} = 95 + (500-50)(0.05) = 95+22.5 = 117.5^\circ\text{C} \]

Comfortably inside the 125 °C limit, with a 22.5 °C ripple riding on a 95 °C mean.

Now the comparison that makes the point. If 500 W were applied continuously:

\[ T_j = 45+(500)(1.0) = 545^\circ\text{C} \]

Which is not a temperature so much as a statement that the device would be destroyed in well under a second. The same power level is perfectly survivable in 10 ms bursts and instantly fatal continuously — a factor of more than four in temperature rise from nothing but the time scale.

Why \(Z_{th}\) is so much smaller than \(R_{th}\). Each layer of the thermal path has heat capacity as well as resistance, so it takes time to warm up and pass heat onward:

Pulse lengthHeat has reachedTypical \(Z_{th}\)
< 1 msthe die only~0.02 K/W
10 msdie and package0.05 K/W
100 msreaching the sink~0.12 K/W
> 10 swhole system — steady state1.0 K/W

For a short pulse the silicon's own heat capacity absorbs the energy and releases it slowly afterwards. This is exactly the mechanism behind the \(I^2t\) rating of Set 4 — and behind the surge ratings that let a rectifier survive an inrush many times its continuous current.

Where the approximation fails. Two limits are worth naming:

\[ \delta \to 1: \quad Z_{th} \to R_{th} \quad\text{(no benefit)} \]

And at the other end, a very short but very intense pulse can melt the die locally even though the average junction temperature is modest — the failure is thermal gradient across the die, not bulk temperature. Single-pulse \(Z_{th}\) curves stop being valid below about 100 µs for this reason, and the safe operating area takes over.

Thermal resistance answers the steady question; thermal capacitance answers the transient one. Most power-electronic loads are pulsed — motor starting, welding, inrush, fault currents, PWM at low modulation — so designing everything from \(R_{th}\) alone produces heatsinks several times larger than necessary, and designing from \(Z_{th}\) alone produces devices that fail after ten minutes.
Answera\(P_{avg} = 50\ \text{W}\)   b\(T_{j,peak} = 117.5^\circ\text{C}\)   c continuous 500 W would imply \(545^\circ\text{C}\) — destruction
Problem 4Exam levelWhat a Fan Buys

The 80 W device of Problem 1 uses a heatsink whose thermal resistance is \(0.75\ \text{K/W}\) in natural convection and \(0.35\ \text{K/W}\) with 2 m/s of forced air. With \(R_{th(j-c)}+R_{th(c-s)} = 0.25\ \text{K/W}\) and \(T_a = 45^\circ\text{C}\), find the junction temperature in each case, the extra power the fan permits at 125 °C, and the consequence of fan failure.

Solution

Natural convection — the design of Problem 1:

\[ T_j = 45+(80)(0.25+0.75) = 45+80 = 125^\circ\text{C} \]

Exactly at the derated limit, with no margin at all. That was the design intent, but it means every assumption — ambient, loss, mounting quality — must hold perfectly.

With forced air:

\[ T_j = 45+(80)(0.25+0.35) = 45+48 = 93^\circ\text{C} \]

A 32 °C reduction from moving air across the same piece of metal. Note that the heatsink more than halved — 0.75 to 0.35 — but the junction temperature rise fell only 40%, because the fixed 0.25 K/W of package and interface does not improve with airflow.

How much more power the fan permits at the same 125 °C:

\[ P_{max} = \frac{T_{j,max}-T_a}{R_{th(j-a)}} = \frac{125-45}{0.60} = 133\ \text{W} \]
\[ \frac{133}{80} = 1.67 \quad\Longrightarrow\quad 67\%\ \text{more power} \]

Which is the real economic argument. A fan costing a few units of currency substitutes for a heatsink two-thirds larger, in a smaller enclosure — and this is why almost every converter above a kilowatt is forced-cooled.

Now the risk. Suppose the design is uprated to 133 W on the strength of the fan, and the fan then fails:

\[ T_j = 45+(133)(0.25+0.75) = 45+133 = 178^\circ\text{C} \]

Well past the 150 °C absolute maximum, and the device is destroyed — not eventually, but within the thermal time constant of the heatsink, typically a few minutes. A forced-cooled design has no passive fallback.

What the design must therefore include:

MeasureProtects against
Sink thermistor with thermal shutdownfan failure, blocked filter, high ambient
Fan tachometer monitoringstalled or slowing fan, before it overheats
Output derating above a sink temperaturegraceful degradation rather than shutdown
Filter service intervalthe most common cause in the field

Note that a sink thermistor responds on the heatsink's time constant — minutes — which is fast enough for airflow loss but far too slow for a short circuit. The two failure modes need different protection, and Set 7's desaturation detection handles the fast one.

Forced cooling converts a thermal design into a system with a moving part. The 67% capacity gain is real and usually worth taking, but it is bought by making the converter's survival depend on airflow that can be blocked by dust, stopped by a bearing, or simply unplugged. Every forced-cooled design needs a sensor that knows when the assumption has stopped being true.
Answera\(125^\circ\text{C}\) natural, \(93^\circ\text{C}\) forced   b\(133\ \text{W}\), a 67% increase   c fan failure at 133 W gives \(178^\circ\text{C}\) — destruction
Problem 5ChallengeThe Interface

A device dissipating 100 W has \(R_{th(j-c)} = 0.15\ \text{K/W}\) and sits on a \(0.4\ \text{K/W}\) sink in a 40 °C ambient. Compare four mounting arrangements:

  • dry, metal to metal: \(R_{th(c-s)} = 0.5\ \text{K/W}\);
  • thermal grease: \(0.1\ \text{K/W}\);
  • mica washer plus grease, for isolation: \(0.35\ \text{K/W}\);
  • an isolated package with \(R_{th(j-c)} = 0.25\) and grease at \(0.1\ \text{K/W}\).

Find the junction temperature in each case and recommend an approach.

Solution

Dry mounting. Two machined surfaces touch at a small fraction of their apparent area; the rest is air, which is an excellent insulator:

\[ T_j = 40+(100)(0.15+0.5+0.4) = 40+105 = 145^\circ\text{C} \]

Past any sensible derating and close to the absolute maximum. Dry mounting is not a mounting method; it is a fault.

Thermal grease fills the air gaps with something 200 times more conductive than air:

\[ T_j = 40+(100)(0.15+0.1+0.4) = 40+65 = 105^\circ\text{C} \]

A 40 °C improvement from a film a few tens of micrometres thick. Note also that more grease is worse, not better: the compound itself is a poor conductor compared with metal, and its only job is to displace air from the gaps that remain after the surfaces are clamped.

Now add electrical isolation, which is usually mandatory — the tab of most power packages is connected to the drain or collector, and several devices sharing a grounded sink cannot all have live tabs:

\[ T_j = 40+(100)(0.15+0.35+0.4) = 40+90 = 130^\circ\text{C} \]
\[ \text{cost of isolation} = 130-105 = 25^\circ\text{C} \]

The isolated package does the same job differently. The isolation is built into the package, so \(R_{th(j-c)}\) is worse but the interface can use plain grease:

\[ T_j = 40+(100)(0.25+0.1+0.4) = 40+75 = 115^\circ\text{C} \]

Fifteen degrees better than the mica washer, for the same isolation.

Compare the four:

MountingIsolated?\(T_j\)Assessment
Dryno145 °Cunacceptable
Greaseno105 °Cbest thermally, live tab
Mica + greaseyes130 °Cmarginal
Isolated packageyes115 °Crecommended

The isolated package wins because it puts the insulating layer where the heat flux is spread over the whole die-attach area, rather than at a mechanical joint where it must also survive clamping force, thermal cycling and assembly variation.

Why the interface is the least reliable link. Every other resistance in the chain is a material property; this one is an assembly outcome:

FailureEffect on \(R_{th(c-s)}\)
Insufficient clamping torquerises sharply — poor contact area
Grease pump-out over thermal cyclesdrifts upward over years
Grease omitted in assembly0.1 → 0.5 K/W, i.e. +40 °C
Burr or paint under the devicelocal hot spot, not detected by a sink sensor

A design that only works with a perfect interface will fail in production. Allowing 0.15 K/W where 0.1 is nominal costs 5 °C on paper and prevents an entire class of field returns.

Isolation is not optional, so the question is only where to put it. A mica washer puts it at the mechanical joint, where it is thinnest but also where contact is worst; an isolated package puts it inside, where the manufacturer controls it. Fifteen degrees is a large price for the convenience of a cheaper device, and it is paid at every unit built.
Answera\(145^\circ\text{C}\) dry   b\(105^\circ\text{C}\) grease   c\(130^\circ\text{C}\) mica   d\(115^\circ\text{C}\) isolated package — recommended
Problem 6ChallengeCooling an Inverter

A three-phase inverter module contains six IGBTs dissipating 35 W each and six freewheeling diodes dissipating 15 W each. Within the module, \(R_{th(j-c)} = 0.15\ \text{K/W}\) for each IGBT and \(0.30\ \text{K/W}\) for each diode; the module-to-sink resistance is \(0.03\ \text{K/W}\) for the whole baseplate. Ambient is 50 °C and \(T_{j,max}\) is derated to 125 °C. Find the total loss, the required heatsink, and all the intermediate temperatures.

Solution

Total loss through the baseplate and sink:

\[ P_{total} = 6(35)+6(15) = 210+90 = 300\ \text{W} \]

Every watt passes through the module baseplate and the heatsink; only the final junction-to-case link is per-device. That asymmetry is what makes module thermal design different from discrete design.

Write the chain for the IGBT, being careful about which loss flows through which link:

\[ T_{j,IGBT} = T_a + P_{total}R_{th(s-a)} + P_{total}R_{th(c-s)} + P_{IGBT}R_{th(j-c)} \]
\[ = 50 + 300R_{th(s-a)} + (300)(0.03) + (35)(0.15) = 64.25 + 300R_{th(s-a)} \]

And for the diode, which dissipates less but sits behind twice the junction-to-case resistance:

\[ T_{j,diode} = 50 + 300R_{th(s-a)} + 9 + (15)(0.30) = 63.5 + 300R_{th(s-a)} \]

The two are within a degree of each other — 64.25 against 63.5 — which is not a coincidence. Module designers size each die so that all junctions reach their limit together; oversizing the diode would waste area, undersizing it would make the diode the constraint.

The IGBT binds, so impose the limit on it:

\[ 64.25 + 300R_{th(s-a)} \le 125 \;\Longrightarrow\; R_{th(s-a)} \le \frac{60.75}{300} = 0.2025\ \text{K/W} \]
\[ \text{specify } R_{th(s-a)} = 0.20\ \text{K/W} \]

Check the diode at that value: \(63.5+300(0.20) = 123.5^\circ\text{C}\) — inside the limit with 1.5 °C to spare. Both constraints are satisfied by the tighter of the two.

The full temperature profile:

NodeTemperatureRise from previous
Ambient50.0 °C
Heatsink110.0 °C+60.0 (300 W × 0.20)
Module baseplate119.0 °C+9.0 (300 W × 0.03)
IGBT junction124.25 °C+5.25 (35 W × 0.15)
Diode junction123.5 °C+4.5 (15 W × 0.30)

Eighty per cent of the total rise happens between the ambient and the heatsink surface. That is where the design effort belongs, and it is why 0.20 K/W at 300 W means forced air at minimum — a natural-convection extrusion of that performance would be impractically large.

Sanity-check the specification. A 0.20 K/W sink dissipating 300 W means:

\[ \Delta T_{sink} = 60^\circ\text{C above ambient at }110^\circ\text{C surface temperature} \]

Which raises three practical points at once: the sink is a burn hazard and needs guarding; the capacitors and gate drivers mounted nearby will see a far higher ambient than 50 °C; and at 110 °C the sink itself radiates significantly, so the real performance will be slightly better than the catalogue figure. A thermal design that stops at the junction temperature has answered only half the question.

In a module, the shared links dominate and the private links decide. The baseplate and heatsink carry all 300 W and produce 69 of the 74 °C rise; the per-device junction-to-case links add only 5 degrees but determine which device sets the limit. Getting the heatsink right is most of the temperature; getting the comparison between devices right is all of the reliability.
Answera\(P_{total} = 300\ \text{W}\)   b\(R_{th(s-a)} \le 0.20\ \text{K/W}\)   c\(T_s = 110,\ T_c = 119,\ T_{j,IGBT} = 124.25^\circ\text{C}\)
Formulas

Key Formulas

QuantityRelationNotes
Thermal chain\(T_j = T_a+P\sum R_{th}\)Series, like resistances
Thermal budget\(R_{th(j-a)} \le \dfrac{T_{j,max}-T_a}{P}\)Design backwards — Problem 1
Heatsink requirement\(R_{th(s-a)} \le R_{th(j-a)}-R_{jc}-R_{cs}\)Fixed links spend it first
Shared sink\(T_s = T_a+\left(\sum P_k\right)R_{th(s-a)}\)Sink sees the total — Problem 2
Individual junction\(T_{j,k} = T_s+P_k\left(R_{jc,k}+R_{cs,k}\right)\)Check every device
Duty ratio\(\delta = t_p/T,\ P_{avg} = \delta P_{pulse}\)Problem 3
Pulsed junction temperature\(T_{j,pk} = T_a+P_{avg}R_{th}+\left(P_{pk}-P_{avg}\right)Z_{th}\)Two terms, two impedances
Transient limit\(Z_{th} \to R_{th}\) as \(\delta \to 1\)No benefit at high duty
Power uprating\(P_{max} = \dfrac{T_{j,max}-T_a}{R_{th(j-a)}}\)Fan gave +67% — Problem 4
Cost of isolation\(\Delta T = P\,\Delta R_{th(c-s)}\)25 °C for mica — Problem 5
Module chain\(T_j = T_a+P_{tot}\left(R_{sa}+R_{cs}\right)+P_{dev}R_{jc}\)Shared vs private — Problem 6
Pitfalls

Common Mistakes

  1. Adding thermal resistances in parallel. A heat path from junction to ambient is a series chain; the full loss passes through every link — Problem 1.

  2. Designing to the absolute maximum junction temperature. The 25 °C of derating is worth 0.31 K/W here — nearly half the heatsink allowance — Problem 1.

  3. Using the total loss in a device's junction-to-case term. Only that device's own loss flows through its own package — Problems 2 and 6.

  4. Checking only the average device on a shared sink. The average passed at 120 °C while the real worst case was 126 °C — Problem 2.

  5. Assuming separate heatsinks are safer. Splitting one sink into two of twice the resistance made the hot device 10 °C worse — Problem 2.

  6. Using steady-state \(R_{th}\) for pulsed loading. It predicted 545 °C where the true peak was 117.5 °C — Problem 3.

  7. Applying \(Z_{th}\) to the full pulse power. The transient term uses only the excess over the average; the average uses the full steady resistance — Problem 3.

  8. Uprating a design on the strength of a fan with no monitoring. At the uprated 133 W a fan failure gives 178 °C — past the absolute maximum — Problem 4.

  9. Omitting or over-applying thermal compound. Dry costs 40 °C here; excess grease is also worse than a thin film, since the compound conducts far less well than metal — Problem 5.

  10. Treating the interface as a fixed number. It is the only link in the chain determined by assembly rather than by material, so allow margin on it — Problem 5.

Looking Ahead

Six problems, and the same series chain each time — but the interesting results came from noticing what flows through which link. The heatsink carries every watt and three-quarters of the temperature rise; each package carries only its own device's loss but decides which device sets the limit; and the interface, the smallest resistance of all, is the only one determined by how carefully somebody tightened a screw. Problem 3 added the dimension that makes power electronics survivable at all: silicon has heat capacity, so a pulse is not the same as a steady load.

That completes Part 1. Eight sets have built one device model. A switch has an on-state drop that heats it in proportion to \(I_{rms}^2\) or \(I_{avg}\); it takes finite time to change state and pays energy each time; it must be triggered, protected, sometimes forced off, and always cooled. Every converter in the rest of this book is built from that object, and every efficiency figure in Parts 2 to 7 traces back to the loss models of Sets 2 and 7 and the thermal limits of this one.

Next: Part 2 begins with Set 9 — Single-Phase Diode Rectifiers, where the devices stop being the subject and become the components. The question changes from “what does this switch cost?” to “what waveform does this arrangement of switches produce?” — average and RMS output, ripple, form factor, and the load's effect on all three.